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Preliminary
SGA-8543Z
Product Description
Sirenza Microdevices' SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-voltage battery operated systems. The device provides low NF and excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements. The matte tin finish on Sirenza's lead-free "Z" package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.
Pb & Green Package High IP3, Medium Power Discrete SiGe Transistor
RoHS Compliant
Product Features
* * * * * * * DC-3.5 GHz Operation Lead Free, RoHS Compliant & Green Package 1.5 dB NFMIN @ 2.44 GHz 15.6 dB Gmax @ 2.44 GHz P1dB = +20.6 dBm @ 2.44 GHz OIP3 = +34.6 dBm @ 2.44 GHz Low Cost, High Performance, Versatility
Typical Gmax, OIP3, P1dB @3.3V, 86mA
31 28 25 OIP3 38 35 32 29 Gmax 26 23 P1dB 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 20 17
22 19 16 13 10
OIP3, P1dB (dBm)
Gmax (dB)
Applications
* * * * * Analog and Digital Wireless Systems 3G, Cellular, PCS, RFID Fixed Wireless, Pager Systems PA stage for Medium Power Applications AN-079 contains detailed application circuits
Frequency Min. Typ. Max.
Frequency (GHz)
Symbol Parameters
Units
GMAX S21 G P1dB OIP3 NF NFmin hFE BVCEO Rth, j-l VCE ICE
Test Conditions:
Maximun Available Gain ZS=ZS*, ZL=ZL* Insertion Gain [1] Power Gain [2] ZS=ZSOPT, ZL=ZLOPT Output Power at 1dB Compression [2] ZS=ZSOPT, ZL=ZLOPT Output Third Order Intercept Point [2] ZS=ZSOPT, ZL=ZLOPT Noise Figure [2] ZS=ZSOPT, ZL=ZLOPT Minimum Noise Figure with ICE = 25mA ZS= OPT, ZL=ZL* DC Current Gain Collector - Emitter Breakdown Voltage Thermal Resistance (Junction - lead) Device Operating Voltage (collector- emitter) Device Operating Current (collector - emitter)
dB dB dB dBm dBm dB dB
880 MHz 2440 MHz 880 MHz 880 MHz 2440 MHz 880 MHz 2440 MHz 880 MHz 2440 MHz 880 MHz 2440 MHz 880 MHz 2440 MHz 120 5.7
22.9 15 18 19 14 20 20.6 33.4 34.6 3.1 2.4 1.0 1.5 180 6 151 300
V C/W V mA
3.8 95
OIP3 Tone Spacing = 1MHz, Pout per tone = 5 dBm [2] Data with Application Circuit
VCE = 3.3V, ICE = 86mA Typ. (unless noted otherwise), TL = 25C
[1] 100% production tested using 50 ohm contact board (no matching circuitry)
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-102583 Rev B
Preliminary SGA-8543Z Medium Power SiGe Discrete Transistor Absolute Maximum Ratings
Parameter
Max Device Current (ICE) Max Device Voltage (VCE) Max. RF Input Power* (See Note)
Absolute Limit
105 mA 4.5 V +18 dBm
Max. Dissipated Power
Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. *Note: Load condition 1, ZL = 50 Ohms Load condition 2, ZL = 10:1 VSWR
See Graph
+150C See Graph
Total Dissipated Power (W)
SGA-8543Z Power Derating Curve
0.6 0.5 0.4 0.3 0.2 Operational Limit (Tj<140C) 0.1 0.0 -40 ABS MAX (Tj<150C)
+150C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l
-10
20
50
80
110
140
170
Lead Temperature (C)
Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level www.sirenza.com Rating Class 1B MSL 1
This product qualification report can be downloaded at
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Typical performance - Engineering Application Circuits (See AN-079)
Freq (MHz) 880 2440
Test Conditions:
VCE (V) 3.3 3.3
VS = 5V
ICE (mA) 86 86
P1dB (dBm) 20.0 20.6
IS = 96mA Typ.
OIP3 (dBm) 33.4 34.6
Gain (dB) 19.0 14.0
S11 (dB) -15.0 -16.0
S22 (dB) -11.0 -22.0
NF (dB) 3.1 2.4
ZSOPT () 22.7 - j2.5 9.3 - j9.9
TL = 25C
ZLOPT () 32.5 + j11.9 21.4 + j1.9
OIP3 Tone Spacing = 1MHz, Pout per tone = 5 dBm
Data above represents typical performance of the application circuits noted in Application Note AN-079. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative.
C
B ZLOPT
ZSOPT
E
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-102583 Rev B
Preliminary SGA-8543Z Medium Power SiGe Discrete Transistor
40 35 30
Insertion Gain & Isolation (ICE = 86mA)
DCIV Curves
0 -5 -10
180 160 140
Gain, Gmax (dB)
Isolation (dB)
25 20 15 10 5 0 -5 0 1
Gmax
Isolation
-15 -20 -25 -30
120
IC (mA)
100 80 60 40 20 0 0 1 2 3 4 5
Gain
-35 -40 -45
2
3
4
5
6
7
8
Frequency (GHz)
VCE (Volts)
IB = 0.1 - 1.1 mA, T=25C Typical Performance - De-embedded S-parameters
Note: S-parameters are de-embedded to the device leads with ZS=ZL=50. The device was mounted on Sirenza's recommended evaluation board. De-embedded S-parameters can be downloaded from our website (www.sirenza.com)
S11 Vs. Frequency
6 GHz 5 GHz 8 GHz
S22 Vs. Frequency
6 GHz
8 GHz
3.5 GHz
3.5 GHz
5 GHz
2.44 GHz
2.44 GHz
1.96 GHz
1.96 GHz .88 GHz
.88 GHz
.5 GHz
.5 GHz
.2 GHz
.05 GHz
.2 GHz .05 GHz .1 GHz
.1 GHz
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-102583 Rev B
Preliminary SGA-8543Z Medium Power SiGe Discrete Transistor
Pin Description
Pin # Function Description
Part Number Ordering Information
Part Number SGA-8543Z Reel Size 7" Devices / Reel 3000
1 2 3 4
RF input / Base Bias. External DC blocking RF IN capacitor required Connection to ground. Use via holes to GND reduce lead inductance. Place via holes as close to lead as possible RF Out / Collector bias. External DC RF OUT blocking capacitor required Same as pin 2 GND
Suggested Pad Layout
Part Identification
4
3
85Z
1 2
Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board.
Package Dimension
D e 4 e 3 L
SYMBOL E D HE MIN 1.15 1.85 1.80 0.80 0.80 0.00 0.10 MAX 1.35 2.25 2.40 1.10 1.00 0.10 0.40
HE
C L
E
A A2 A1
1 b
C L
Q1 b1 2 C
Q1 e b b1 c L
0.65 BSC 0.25 0.55 0.10 0.10 0.40 0.70 0.18 0.30
NOTE: 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONS ARE INCLUSIVE OF PLATING. 3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH & METAL BURR. 4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70. 5. DIE IS FACING UP FOR MOLD AND FACING DOWN FOR TRIM/FORM. ie :REVERSE TRIM/FORM. 6. PACKAGE SURFACE TO BE MIRROR FINISH.
A2
A A1
303 S. Technology Ct. Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com
EDS-102583 Rev B

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